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DB-55008L-450 Datasheet, ST Microelectronics

DB-55008L-450 mosfets equivalent, rf power amplifier using 1 x pd55008l-e n-channel enhancement-mode lateral mosfets.

DB-55008L-450 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 699.48KB)

DB-55008L-450 Datasheet
DB-55008L-450
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 699.48KB)

DB-55008L-450 Datasheet

Features and benefits


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* Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficie.

Application

Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-450 March 2009 Rev 1 1.

Description

The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-450 March 200.

Image gallery

DB-55008L-450 Page 1 DB-55008L-450 Page 2 DB-55008L-450 Page 3

TAGS

DB-55008L-450
power
amplifier
using
PD55008L-E
N-channel
enhancement-mode
lateral
MOSFETs
ST Microelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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